Veselago Lens for Electrons: Focusing and Caustics in Graphene p-n Junctions

The focusing of electric current by a single p-n junction in graphene is predicted. We show that precise focusing can be achieved by fine-tuning the densities of carriers on the nand p-sides of the junction to equal values, whereas the current distribution in junctions with different densities resembles caustics in optics. This finding can be utilized in the engineering of electronic lenses and focused beam-splitters using gate-controlled n-p-n junctions in graphene-based transistors. Physics Department, Lancaster University, Lancaster LA1 4YB, UK Physics Department, Columbia University, 538 West 120th Street, New York, NY 10027, USA NEC-Laboratories America, 4 Independence Way, Princeton, NJ 085540, USA